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NTS4173P
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
I DSS
I GSS
V GS = 0 V, I D = ? 250 m A
V GS = 0 V, V DS = ? 24 V, T J = 25 ° C
V GS = 0 V, V DS = ? 24 V, T J = 85 ° C
V DS = 0 V, V GS = " 12 V
? 30
? 1.0
? 5.0
± 0.1
V
m A
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On ? Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 10 V, I D = ? 1.2 A
? 0.7
? 1.15
90
? 1.5
150
V
m W
V GS = ? 4.5 V, I D = ? 1.0 A
V GS = ? 2.5 V, I D = ? 0.9 A
110
165
200
280
Forward Transconductance
g FS
V DS = ? 5 V, I D = ? 1.2 A
3.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
430
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = ? 15 V
55
40
Total Gate Charge
Q G(TOT)
4.8
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 1.2 A
0.6
1.1
1.5
Total Gate Charge
Q G(TOT)
10.1
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 1.2 A
0.6
1.1
1.5
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
7.7
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 1.2 A, R G = 3 W
5.2
16.2
6.7
Turn ? On Delay Time
t d(on)
5.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 1.2 A, R G = 3 W
6.7
19.9
7.1
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = ? 1.0 A
V DS = 20 V, V GS = 0 V, I S = ? 1.0 A,
dI SD /d t = 100 A/ m s
? 0.8
12
10
2.0
7.0
? 1.0
V
ns
nC
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
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